No. |
Part Name |
Description |
Manufacturer |
151 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
152 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
153 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
154 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
155 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
156 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
157 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
158 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
159 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
160 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
161 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
162 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
163 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
164 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
165 |
2SA965 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
166 |
2SB1457 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
167 |
2SB765 |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
168 |
2SB765K |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
169 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
170 |
2SC1165 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
171 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
172 |
2SC1765 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
173 |
2SC1955 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
174 |
2SC2101 |
Silicon NPN epitaxial planar transistor, VHF band power amplifier applications |
TOSHIBA |
175 |
2SC2102 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
176 |
2SC2103A |
Silicon NPN epitaxial planar VHF band power transistor 27W |
TOSHIBA |
177 |
2SC2104 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
178 |
2SC2105 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
179 |
2SC2106 |
Silicon NPN epitaxial planar UHF band power transistor 12W |
TOSHIBA |
180 |
2SC2117 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
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