No. |
Part Name |
Description |
Manufacturer |
151 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
152 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
153 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
154 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
155 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
156 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
157 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
158 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
159 |
2N4400 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
160 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
161 |
2N4401 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
162 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
163 |
2N4402 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
164 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
165 |
2N4403 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
166 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
167 |
2N4427 |
Silicon planar epitaxial overlay transistors |
Philips |
168 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
169 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
170 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
171 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
172 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
173 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
174 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
175 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
176 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
177 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
178 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
179 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
180 |
2N5770 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
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