No. |
Part Name |
Description |
Manufacturer |
151 |
BF167 |
High frequency transistor |
mble |
152 |
BF167 |
High frequency transistor |
mble |
153 |
BF167 |
Silicon N-P-N low power transistor |
Mullard |
154 |
BF167 |
Silicon Transistor |
Mullard |
155 |
BF167 |
NPN silicon transistor, RF amplification |
SESCOSEM |
156 |
BF167 |
Transistor for IF amplifiers |
SGS-ATES |
157 |
BF167 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
158 |
BF167 |
Tranzystor krzemowy ma�ej mocy, wielkiej cz�stotliwo�ci |
Ultra CEMI |
159 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
160 |
BF173 |
Silicon high frequency, low power NPN transistor |
IPRS Baneasa |
161 |
BF173 |
Si-PLANAR-npn |
IPRS Baneasa |
162 |
BF173 |
Silicon NPN Epitaxial-Planar RF Transistor |
IPRS Baneasa |
163 |
BF173 |
SI-PLANAR-npn TRANSISTOR |
IPRS Baneasa |
164 |
BF173 |
High frequency transistor |
mble |
165 |
BF173 |
High frequency transistor |
mble |
166 |
BF173 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
167 |
BF173 |
Silicon N-P-N low power transistor |
Mullard |
168 |
BF173 |
Silicon Transistor |
Mullard |
169 |
BF173 |
NPN silicon transistor, RF amplification |
SESCOSEM |
170 |
BF173 |
Transistor for IF amplifiers |
SGS-ATES |
171 |
BF173 |
Tranzystor krzemowy ma�ej mocy, wielkiej cz�stotliwo�ci |
Ultra CEMI |
172 |
BF173 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
173 |
BF173S |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
174 |
BF177 |
Si-PLANAR-npn TRANSISTOR |
IPRS Baneasa |
175 |
BF177 |
Silicon Transistor |
Mullard |
176 |
BF177 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
177 |
BF178 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
178 |
BF178 |
Si-PLANAR-npn TRANSISTOR |
IPRS Baneasa |
179 |
BF178 |
Silicon Transistor |
Mullard |
180 |
BF178 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
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