| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 152 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 153 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 154 |
1SS400T1 |
High Speed Switching Diode |
ON Semiconductor |
| 155 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 156 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 157 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 158 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
| 159 |
1SV307 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 160 |
1SV308 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 161 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 162 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 163 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 164 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 165 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 166 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 167 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 168 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 169 |
2N1190 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 170 |
2N1191 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 171 |
2N1192 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 172 |
2N1193 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 173 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 174 |
2N1300 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 175 |
2N1301 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 176 |
2N1305 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 177 |
2N1307 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 178 |
2N1309 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 179 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 180 |
2N1499A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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