| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IR25602STRPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels |
International Rectifier |
| 152 |
IR25604 |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 153 |
IR25604SPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 154 |
IR25606 |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 155 |
IR25606SPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 156 |
IR25606STRPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 157 |
IR25607 |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 158 |
IR25607STRPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 159 |
IRS2003 |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 160 |
IRS2003SPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 161 |
IRS2004 |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 162 |
IRS2004SPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 163 |
IRS2004STRPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 164 |
IRS2304 |
Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels |
International Rectifier |
| 165 |
IRS2304SPBF |
Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels |
International Rectifier |
| 166 |
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 167 |
IRS2607DSPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels |
International Rectifier |
| 168 |
IRS2608DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 169 |
IRS2609DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 170 |
ISL6534 |
Dual PWM Controller and LDO Regulator 2%; DDR or Independent Mode; Freq = 300kHz nominal (adjustable 100 to 1000kHz) |
Intersil |
| 171 |
ISL97686 |
4-Channel LED Driver with Independent Channel Control for Dynamic Dimming |
Intersil |
| 172 |
ISL97691 |
2.4V LED Driver with Independent Analog and PWM Dimming Controls of 2 Backlights for 3D Application |
Intersil |
| 173 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 174 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 175 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 176 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 177 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 178 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 179 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 180 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
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