No. |
Part Name |
Description |
Manufacturer |
151 |
DME50B01 |
Bipolar Transistors |
Panasonic |
152 |
DME50C01 |
Bipolar Transistors |
Panasonic |
153 |
DME800 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
154 |
DME800 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
155 |
DME914C1 |
Transistors with Built-in Resistor |
Panasonic |
156 |
DMEG250 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
157 |
DMEG250 |
250 W, 50 V, 960-1215 MHz common base transistor |
GHz Technology |
158 |
DMEG250-2 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
159 |
DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
160 |
DMEGN-700V |
GaN Transistors |
Microsemi |
161 |
ELANSC520 |
ElanSC520 Data Sheet Amendment |
Advanced Micro Devices |
162 |
EMBEDMENT GAGES |
Special Purpose Sensors - Embedment Gages |
Vishay |
163 |
EMBEDMENT GAGES |
Special Purpose Sensors - Embedment Gages |
Vishay |
164 |
FDME0106NZT |
N-Channel Power Trench MOSFET 20V, 9A, 18mOhms |
Fairchild Semiconductor |
165 |
FDME1023PZT |
-20V Dual P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
166 |
FDME1024NZT |
20V Dual N-Channel Power Trench� MOSFET |
Fairchild Semiconductor |
167 |
FDME1034CZT |
20V Complementary PowerTrench� MOSFET |
Fairchild Semiconductor |
168 |
FDME410NZT |
20V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
169 |
FDME430NT |
30V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
170 |
FDME510PZT |
-20V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
171 |
FDME820NZT |
20V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
172 |
FDME905PT |
-12V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
173 |
FDME910PZT |
-20V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
174 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
175 |
MSC81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
176 |
MSC81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
177 |
SD1520-3 |
NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
178 |
SD1520-8 |
NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
179 |
SD1522-3 |
NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN |
SGS Thomson Microelectronics |
180 |
SD1522-9 |
NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN |
SGS Thomson Microelectronics |
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