No. |
Part Name |
Description |
Manufacturer |
151 |
DMEG250-2 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
152 |
DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
153 |
DMEGN-700V |
GaN Transistors |
Microsemi |
154 |
ELANSC520 |
ElanSC520 Data Sheet Amendment |
Advanced Micro Devices |
155 |
EMBEDMENT GAGES |
Special Purpose Sensors - Embedment Gages |
Vishay |
156 |
EMBEDMENT GAGES |
Special Purpose Sensors - Embedment Gages |
Vishay |
157 |
FDME0106NZT |
N-Channel Power Trench MOSFET 20V, 9A, 18mOhms |
Fairchild Semiconductor |
158 |
FDME1023PZT |
-20V Dual P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
159 |
FDME1024NZT |
20V Dual N-Channel Power Trench� MOSFET |
Fairchild Semiconductor |
160 |
FDME1034CZT |
20V Complementary PowerTrench� MOSFET |
Fairchild Semiconductor |
161 |
FDME410NZT |
20V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
162 |
FDME430NT |
30V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
163 |
FDME510PZT |
-20V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
164 |
FDME820NZT |
20V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
165 |
FDME905PT |
-12V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
166 |
FDME910PZT |
-20V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
167 |
SD1520-3 |
NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
168 |
SD1520-8 |
NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
169 |
SD1522-3 |
NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN |
SGS Thomson Microelectronics |
170 |
SD1522-9 |
NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN |
SGS Thomson Microelectronics |
171 |
SD1524-1 |
Gold Metallized silicon NPN power RF transistor for IFF/DME applications |
SGS Thomson Microelectronics |
172 |
SD1526-1 |
NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN |
SGS Thomson Microelectronics |
173 |
SD1527-8 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
174 |
SD1528-6 |
NPN Power RF Transistor designed for IFF/DME TACAN applications |
SGS Thomson Microelectronics |
175 |
SD1528-8 |
Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
176 |
SD1530-1 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
177 |
SD1530-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
178 |
SD1536-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
179 |
SD1536-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
180 |
SD1540-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
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