| No. |
Part Name |
Description |
Manufacturer |
| 151 |
SI4850EY-T1 |
N-Channel Reduced Qg/ Fast Switching MOSFET |
Vishay |
| 152 |
SI4850EY-T1-E3 |
N-Channel Reduced Qg/ Fast Switching MOSFET |
Vishay |
| 153 |
SI4860DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 154 |
SI4866DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 155 |
SI4872DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 156 |
SI4874DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 157 |
SI4882DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 158 |
SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 159 |
SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 160 |
SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET |
Vishay |
| 161 |
SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 162 |
SI6801DQ |
N-and P-Channel, Reduced Qg, Fast Switching MOSFET |
Vishay |
| 163 |
SI6803DQ |
N-/P_Ch Half-Bridge, Reduced Qg, Fast Switching MOSFET |
Vishay |
| 164 |
SI6820DQ |
N-Ch, Reduced Qg, Fast Switching MOSFET + Schottky Diode |
Vishay |
| 165 |
SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET + Schottky Diode |
Vishay |
| 166 |
SI7388DP |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 167 |
SI7392DP |
N-Channel Reduced Qg, Fast Switching WFET |
Vishay |
| 168 |
SI7392DP-T1 |
N-Channel Reduced Qg/ Fast Switching WFET |
Vishay |
| 169 |
SI7446DP |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 170 |
SI7860DP |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 171 |
SI7882DP |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 172 |
SI9422DY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 173 |
SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 174 |
TC1016 |
The TC1016 is a high accuracy (typically ±0.5%) CMOS upgrade for bipolar low dropout regulators. It is offered in an SC-70 package, which represents 50% reduced footprint vs. the widely used SOT-23 package.Designed specifically for ba |
Microchip |
| 175 |
TC1017 |
The TC1017 is a high accuracy (typically �0.5%) CMOS upgrade for bipolar low dropout regulators. It is offered in an SC-70 package, which represents 50% reduced footprint vs. the widely used SOT-23 package.Designed specifically for battery |
Microchip |
| 176 |
TC59 |
The TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced supply current significa |
Microchip |
| 177 |
TS3A226AE |
Autonomous Audio Headset Switch with Reduced GND Switch RON and FM Capability |
Texas Instruments |
| 178 |
TS3A226AEYFFR |
Autonomous Audio Headset Switch with Reduced GND Switch RON and FM Capability 9-DSBGA -40 to 85 |
Texas Instruments |
| 179 |
UC5602DWP |
COST REDUCED 18-LINE 5V TERMINATOR FOR SCSI AND FAST SCSI |
Texas Instruments |
| 180 |
UC5602DWPTR |
COST REDUCED 18-LINE 5V TERMINATOR FOR SCSI AND FAST SCSI |
Texas Instruments |
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