| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N863 |
Rectifier Diode 600V |
Motorola |
| 152 |
1N874 |
Rectifier Diode 600V |
Motorola |
| 153 |
1N885 |
Rectifier Diode 600V |
Motorola |
| 154 |
1PM6 |
1.2A Single Phase Rectifier Bridge 600V |
IPRS Baneasa |
| 155 |
1S136 |
Diffused silicon diode 600V, color code brown-orange-blue |
Texas Instruments |
| 156 |
20PM6AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 157 |
2722 162 05321 |
VHF/UHF Broadband Circulators/Isolators, frequency range 600 to 960 MHz |
Philips |
| 158 |
2722 162 06111 |
VHF/UHF Broadband Circulators/Isolators, frequency range 600 to 960 MHz |
Philips |
| 159 |
2KBP06 |
Diode Rectifier Bridge Single 600V 2A 4-Pin D-44 |
New Jersey Semiconductor |
| 160 |
2KBP06M |
Diode Rectifier Bridge Single 600V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 161 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 162 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 163 |
2N5477 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
| 164 |
2N5478 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
| 165 |
2N5479 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
| 166 |
2N5480 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
| 167 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 168 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 169 |
2N7002 |
N-channel transistor. Drain-sourse voltage 60 V. |
Comchip Technology |
| 170 |
2SK3670 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 171 |
2SK3940 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 172 |
2SK4018 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 173 |
2SK4019 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 174 |
31GF6 |
Ultrafast Plastic Rectifier,Forward Current 3.0A, Reverse Voltage 600V |
Vishay |
| 175 |
3B30L60 |
3A three phase rectifier bridge 600V |
Texas Instruments |
| 176 |
3B60L60 |
6A three phase rectifier bridge 600V |
Texas Instruments |
| 177 |
3N250 |
Diode Rectifier Bridge Single 600V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 178 |
3N257 |
Diode Rectifier Bridge Single 600V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 179 |
3PM6 |
30A Single Phase Rectifier Bridge 600V |
IPRS Baneasa |
| 180 |
3VR60 |
3 Watt Epoxy Silicon Zener Diode 60V |
Transitron Electronic |
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