| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N982A |
0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 152 |
1N982A |
Zener Diode 75V |
Motorola |
| 153 |
1N982A |
Diode Zener Single 75V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 154 |
1N982B |
Zener Diode 75V |
Motorola |
| 155 |
1N982B |
Diode Zener Single 75V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 156 |
1N982C |
Diode Zener Single 75V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 157 |
1N982D |
Diode Zener Single 75V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 158 |
1S3075 |
1W Zener diode 75V |
Texas Instruments |
| 159 |
1S3075A |
1W Zener diode 75V, ±5% tolerance |
Texas Instruments |
| 160 |
1S6075 |
Silicon power zener diode 75V |
Texas Instruments |
| 161 |
1S6075A |
Silicon power zener diode 75V, ±5% tolerance |
Texas Instruments |
| 162 |
1S6075R |
Silicon power zener diode 75V, reverse polarity |
Texas Instruments |
| 163 |
1SMB5946A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 75 V. +-10% tolerance. |
Motorola |
| 164 |
1SMB5946B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 75 V. +-5% tolerance. |
Motorola |
| 165 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 166 |
3EZ75D5 |
Diode Zener Single 75V 5% 3W 2-Pin DO-41 |
New Jersey Semiconductor |
| 167 |
3VR75 |
3 Watt Epoxy Silicon Zener Diode 75V |
Transitron Electronic |
| 168 |
524V48 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 169 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 170 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 171 |
ARZ145T05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 172 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 173 |
ARZ145T24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 174 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 175 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 176 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 177 |
BAS16 |
General Switching Diode 75V |
ON Semiconductor |
| 178 |
BAS16 |
General Switching Diode 75V |
ON Semiconductor |
| 179 |
BAS16 |
General Switching Diode 75V |
ON Semiconductor |
| 180 |
BAS16DXV6T1 |
General Switching Diode 75V |
ON Semiconductor |
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