| No. |
Part Name |
Description |
Manufacturer |
| 151 |
15KPA54CA |
Diode TVS Single Bi-Dir 54V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 152 |
15KPA58C |
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 153 |
15KPA58CA |
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 154 |
15KPA60C |
Diode TVS Single Bi-Dir 60V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 155 |
15KPA60CA |
Diode TVS Single Bi-Dir 60V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 156 |
15KPA64C |
Diode TVS Single Bi-Dir 64V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 157 |
15KPA64CA |
Diode TVS Single Bi-Dir 64V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 158 |
15KPA70C |
Diode TVS Single Bi-Dir 70V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 159 |
15KPA70CA |
Diode TVS Single Bi-Dir 70V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 160 |
15KPA75C |
Diode TVS Single Bi-Dir 75V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 161 |
15KPA75CA |
Diode TVS Single Bi-Dir 75V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 162 |
15KPA78C |
Diode TVS Single Bi-Dir 78V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 163 |
15KPA78CA |
Diode TVS Single Bi-Dir 78V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 164 |
15KPA85C |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 165 |
15KPA85CA |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 166 |
15KPA90C |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 167 |
15KPA90CA |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 168 |
1702 |
5 Femtoampere Bias Current Operational Amplifier |
TelCom Semiconductor |
| 169 |
1MB12-140 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 170 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 171 |
1MBH60D-090A |
IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 172 |
1N6036 |
Diode TVS Single Bi-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 173 |
1N6036A |
Diode TVS Single Bi-Dir 6V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 174 |
1N6036B |
Diode TVS Single Bi-Dir 5.5V 15KW 2-Pin DO-13 Bulk |
New Jersey Semiconductor |
| 175 |
1N6037 |
Diode TVS Single Bi-Dir 6.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 176 |
1N6037A |
Diode TVS Single Bi-Dir 7V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 177 |
1N6038 |
Diode TVS Single Bi-Dir 7V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 178 |
1N6038A |
Diode TVS Single Bi-Dir 7.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 179 |
1N6039 |
Diode TVS Single Bi-Dir 8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 180 |
1N6039A |
Diode TVS Single Bi-Dir 8.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
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