No. |
Part Name |
Description |
Manufacturer |
151 |
AME7700 |
Switch Capacitor Voltage Doublers |
AME |
152 |
AME7700 |
Switched Capacitor Voltage Doublers |
Analog Microelectronics |
153 |
AME7700AEEV |
Switch Capacitor Voltage Doublers |
AME |
154 |
AME7700AEEV |
Switched Capacitor Voltage Doublers |
Analog Microelectronics |
155 |
AME7701 |
Switch Capacitor Voltage Doublers |
AME |
156 |
AME7701 |
Switched Capacitor Voltage Doublers |
Analog Microelectronics |
157 |
AME7701AEEV |
Switch Capacitor Voltage Doublers |
AME |
158 |
AME7701AEEV |
Switched Capacitor Voltage Doublers |
Analog Microelectronics |
159 |
AME7702 |
Switch Capacitor Voltage Doublers |
AME |
160 |
AME7702 |
Switched Capacitor Voltage Doublers |
Analog Microelectronics |
161 |
AME7702AEEY |
Switch Capacitor Voltage Doublers |
AME |
162 |
AME7702AEEY |
Switched Capacitor Voltage Doublers |
Analog Microelectronics |
163 |
AMP01S |
Space Qualified Die Document |
Analog Devices |
164 |
AMS682 |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
165 |
AMS682CP |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
166 |
AMS682CS |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
167 |
AMS682EP |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
168 |
AMS682ES |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
169 |
AS11P2TLR |
Low voltage 1 ohm single-pole double-throw analog switch with break-before-make feature |
ST Microelectronics |
170 |
AS11P2TLRQ |
Low voltage 1 ohm single-pole double-throw analog switch with break-before-make feature |
ST Microelectronics |
171 |
AS21P2THB |
Low voltage high bandwidth dual single-pole double-throw analog switch |
ST Microelectronics |
172 |
AS21P2THBQ |
Low voltage high bandwidth dual single-pole double-throw analog switch |
ST Microelectronics |
173 |
AS21P2TLR |
Low voltage 0.5 ohm max dual single-pole double-throw analog switch with break-before-make |
ST Microelectronics |
174 |
AS21P2TLRQ |
Low voltage 0.5 ohm max dual single-pole double-throw analog switch with break-before-make |
ST Microelectronics |
175 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
176 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
177 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
178 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
179 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
180 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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