No. |
Part Name |
Description |
Manufacturer |
151 |
EDGE649 |
Octal Pin Electronics Driver/Receiver |
Semtech |
152 |
EDGE649 |
Octal Pin Electronics Driver/Receiver |
Semtech |
153 |
HB52E649E12 |
512 MB Registered SDRAM DIMM 64-Mword � 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M � 4 Components) PC100 SDRAM |
Elpida Memory |
154 |
HB52E649E12-A6B |
512 MB Registered SDRAM DIMM 64-Mword � 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M � 4 Components) PC100 SDRAM |
Elpida Memory |
155 |
HB52E649E12-B6B |
512 MB Registered SDRAM DIMM 64-Mword � 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M � 4 Components) PC100 SDRAM |
Elpida Memory |
156 |
IC89E64 |
MICROCONTROLLER, MicroProcessor |
ICSI |
157 |
IME6400 |
MPEG4/2/1 Multimedia Encoder |
etc |
158 |
K4E640412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
159 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
160 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
161 |
K4E640812B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
162 |
K4E640812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
163 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
164 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
165 |
K4E640812B-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
166 |
K4E640812B-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
167 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
168 |
K4E640812B-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
169 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
170 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
171 |
K4E640812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
172 |
K4E640812B-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
173 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
174 |
K4E640812C |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
175 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
176 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
177 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
178 |
K4E640812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
179 |
K4E640812C-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
180 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
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