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Datasheets for EAB

Datasheets found :: 210
Page: | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
151 PS700 The PS700 is a cost-effective, highly accurate IC that measures, stores and reports all of the critical parameters required for rechargeable ... Microchip
152 PS700 The PS700 is a cost-effective, highly accurate IC that measures, stores and reports all of the critical parameters required for rechargeable ... Microchip
153 RV5VG101C RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
154 RV5VG101C-E1 RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
155 RV5VG101C-E2 RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
156 RV5VG101D RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
157 RV5VG101D-E1 RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
158 RV5VG101D-E2 RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
159 RV5VG1XXX SERIES Rechargeable Lithium-Ion Cell Protectors Ricoh
160 S-80814ALNP-EAB-T2 Low-voltage high-precision voltage detector Epson Company
161 S3526B Single Frequency Tuneable Bandpass / Notch Filter / Tone Generator AMI Semiconductor
162 SGA-0163 DC-4500 MHz, 2.1V silicon germanium cascadeable gain block Stanford Microdevices
163 SGA-0363 DC-5000 MHz, 2.5V silicon germanium cascadeable gain block Stanford Microdevices
164 SGA-1163 DC-6000 MHz, 4.6V silicon germanium cascadeable gain block Stanford Microdevices
165 SGA-1263 DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block Stanford Microdevices
166 SGA-2363 DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. Stanford Microdevices
167 SGA-2386 DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. Stanford Microdevices
168 SGA-3563 DC-5000 MHz, 3.2V, silicon germanium cascadeable gain block Stanford Microdevices
169 SGA-3586 DC-5000 MHz, 3.5V, silicon germanium cascadeable gain block Stanford Microdevices
170 SGA-4563 DC-2500 MHz. 3.5V silicon germanium cascdeable gain block. Stanford Microdevices
171 SGA-4586 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz Stanford Microdevices
172 SGA-5263 DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz Stanford Microdevices
173 SGA-5286 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz Stanford Microdevices
174 SGA-5289 DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz Stanford Microdevices
175 SGA-5386 DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz Stanford Microdevices
176 SGA-5389 DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz Stanford Microdevices
177 SGA-5486 DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz Stanford Microdevices
178 SGA-5489 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz Stanford Microdevices
179 SGA-5586 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz Stanford Microdevices
180 SGA-5589 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz Stanford Microdevices


Datasheets found :: 210
Page: | 2 | 3 | 4 | 5 | 6 | 7 |



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