No. |
Part Name |
Description |
Manufacturer |
151 |
HYR166440G-745 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
152 |
HYR1812820G-653 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
153 |
HYR1812820G-745 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
154 |
HYR1812820G-840 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
155 |
HYR1812820G-845 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
156 |
HYR1812840G-745 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
157 |
HYR1825640G-745 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
158 |
HYR183220G-745 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
159 |
HYR183220G-840 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
160 |
HYR183240G-653 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
161 |
HYR183240G-745 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
162 |
HYR183240G-840 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
163 |
HYR183240G-845 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
164 |
HYR186420G-745 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
165 |
HYR186420G-840 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
166 |
HYR186440G-745 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
167 |
ICS9219 |
Direct Rambus Clock Generator Lite |
Integrated Circuit Systems |
168 |
ICS9219YGLF-T |
Direct Rambus Clock Generator Lite |
Integrated Circuit Systems |
169 |
IN74ALS161AD |
Synchronous 4 bit counters; binary, direct reset |
INTEGRAL |
170 |
IN74ALS161AN |
Synchronous 4 bit counters; binary, direct reset |
INTEGRAL |
171 |
IN74LS161D |
Synchronous 4 bit counter; binary, direct reset |
INTEGRAL |
172 |
IN74LS161N |
Synchronous 4 bit counter; binary, direct reset |
INTEGRAL |
173 |
ITM2520 |
Cellular/GPS Image-Reject Receiver RF Front-end IC |
etc |
174 |
K4H510638B |
Direct RDRAM� Data Sheet |
Samsung Electronic |
175 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
176 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
177 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
178 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
179 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
180 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| | | |