| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 152 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 153 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 154 |
1SS393 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 155 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 156 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 157 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 158 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 159 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 160 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 161 |
1SS400T1 |
High Speed Switching Diode |
ON Semiconductor |
| 162 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 163 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 164 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 165 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
| 166 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 167 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 168 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 169 |
2N1305 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 170 |
2N1307 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 171 |
2N1309 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 172 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
| 173 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 174 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 175 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 176 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 177 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 178 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 179 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 180 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
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