| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NMC27C128BQM200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 152 |
NMC27C256BN15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 153 |
NMC27C256BN150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 154 |
NMC27C256BN20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 155 |
NMC27C256BN200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 156 |
NMC27C256BN25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 157 |
NMC27C256BN250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 158 |
NMC27C256BNE15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 159 |
NMC27C256BNE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 160 |
NMC27C256BNE20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 161 |
NMC27C256BNE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 162 |
NMC27C256BNE25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 163 |
NMC27C256BNE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 164 |
NMC27C256BQ15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 165 |
NMC27C256BQ150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 166 |
NMC27C256BQ20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 167 |
NMC27C256BQ200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 168 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 169 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 170 |
NMC27C256BQE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 171 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 172 |
NMC27C256BQM150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 173 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 174 |
NMC27C32BQE250 |
250 ns, Vcc=5V+/-10%, 32,768-bit (4k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 175 |
NTE7131 |
Integrated Circuit DC-Coupled Vertical Deflection Circuit |
NTE Electronics |
| 176 |
NTE7156 |
Integrated Circuit DC-Coupled Vertical Deflection Circuit |
NTE Electronics |
| 177 |
OPI1266 |
HIGH SPEED VERY HIGH VOLTAGE ISOLATOR |
Optek Technology |
| 178 |
PHX15N06E |
PowerMOS transistor Isolated version of PHP20N06E |
Philips |
| 179 |
PHX1N40E |
PowerMOS transistor Isolated version of PHP2N40E |
Philips |
| 180 |
PHX1N50E |
PowerMOS transistor Isolated version fo PHP1N50E |
Philips |
| | | |
