| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1PS89SS05 |
High-speed double diodes |
Philips |
| 152 |
1PS89SS06 |
High-speed double diodes |
Philips |
| 153 |
1R5JU41 |
HIGH SPEED RECTIFIER |
TOSHIBA |
| 154 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 155 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 156 |
1S1832 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 157 |
1S1834 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 158 |
1S1835 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 159 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 160 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 161 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 162 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 163 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 164 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 165 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 166 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 167 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 168 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 169 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 170 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 171 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 172 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 173 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 174 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 175 |
1SS199 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 176 |
1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 177 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 178 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 179 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 180 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| | | |
