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Datasheets for ELECTRIC CO

Datasheets found :: 36815
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 BCR16HM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
152 BCR16PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
153 BCR16PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
154 BCR16PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
155 BCR16UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
156 BCR1AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
157 BCR1AM-12 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
158 BCR1AM-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
159 BCR20A MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
160 BCR20AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
161 BCR20AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
162 BCR20AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
163 BCR20B MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
164 BCR20B-10 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
165 BCR20B-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
166 BCR20C MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
167 BCR20C-10 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
168 BCR20C-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
169 BCR20E MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
170 BCR20KM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
171 BCR25A MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
172 BCR25B MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
173 BCR2PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
174 BCR2PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
175 BCR2PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
176 BCR3 LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
177 BCR30 MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
178 BCR30AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
179 BCR30AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
180 BCR30AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation


Datasheets found :: 36815
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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