| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ASY26 |
Germanium PNP switching transistor. Complementary to ASY28 |
AEG-TELEFUNKEN |
| 152 |
ASY26 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 153 |
ASY27 |
Germanium PNP switching transistor. Complementary to ASY29 |
AEG-TELEFUNKEN |
| 154 |
ASY27 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 155 |
ASY28 |
Germanium NPN switching transistor. Complementary to ASY26 |
AEG-TELEFUNKEN |
| 156 |
ASY28 |
Germanium NPN switching transistor |
TELEFUNKEN |
| 157 |
ASY29 |
Germanium NPN switching transistor. Complementary to ASY27 |
AEG-TELEFUNKEN |
| 158 |
ASY29 |
Germanium NPN switching transistor |
TELEFUNKEN |
| 159 |
ASY30 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 160 |
AUY28 |
Germanium PNP transistor for power switching. |
AEG-TELEFUNKEN |
| 161 |
AUY28 |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
| 162 |
AUZ11 |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
| 163 |
AUZ11D |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
| 164 |
BAW24 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 165 |
BAW25 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 166 |
BAW26 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 167 |
BAW27 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 168 |
BAX20 |
Silicon epitaxial planar general purpose diodes |
AEG-TELEFUNKEN |
| 169 |
BAX21 |
Silicon epitaxial planar general purpose diodes |
AEG-TELEFUNKEN |
| 170 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 171 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 172 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 173 |
BAY67 |
Diffused silicon diode, adapted to switch RF signals |
AEG-TELEFUNKEN |
| 174 |
BAY68 |
Silicon epitaxial planar diodes for fast switching applications |
AEG-TELEFUNKEN |
| 175 |
BAY69 |
Silicon epitaxial planar diodes for fast switching applications |
AEG-TELEFUNKEN |
| 176 |
BAY78 |
Silicon epitaxial planar diodes quad for wing modulators and bridge circuits |
AEG-TELEFUNKEN |
| 177 |
BAY86 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
| 178 |
BAY87 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
| 179 |
BAY88 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
| 180 |
BAY89 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| | | |
