| No. |
Part Name |
Description |
Manufacturer |
| 151 |
AP2128 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 152 |
AP2128K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 153 |
AP2128K-1.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 154 |
AP2128K-1.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 155 |
AP2128K-1.8TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 156 |
AP2128K-2.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 157 |
AP2128K-2.8TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 158 |
AP2128K-3.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 159 |
AP2128K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 160 |
AP2128K-3.9TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 161 |
AP2128K-4.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 162 |
AP2128K-4.75TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 163 |
AP2128K-5.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 164 |
AP2128K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 165 |
AP2129 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 166 |
AP2129K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 167 |
AP2129K-1.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 168 |
AP2129K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 169 |
AP2129K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 170 |
AT86RF210 |
The AT86RF210 Z-Link� Transceiver is an 868/915 MHz direct sequence spread spectrum BPSK transceiver designed for IEEE 802.15.4/ZigBee�-based systems; supports data rates of 20 kbps and 40 kbps, respectively. |
Atmel |
| 171 |
BAV45 |
Extremely low leakage and low capacitance diode (IR=10pA at VRRM) |
Mullard |
| 172 |
BFT66 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
| 173 |
BFT66 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 174 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 175 |
BFT67 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
| 176 |
BFT67 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 177 |
BSH111 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 178 |
BSH121 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 179 |
BSN20 |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 180 |
BSN20 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| | | |
