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Datasheets for END

Datasheets found :: 7508
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 1N5267 2Mbps, Single Pair HDSL ANALOG FRONT END Burr Brown
152 1N5268AFE1205 2Mbps, Single Pair HDSL ANALOG FRONT END Burr Brown
153 1S2074H Silicon Epitaxial Plana Diode, intended for use in High Speed Switching Hitachi Semiconductor
154 1S2076 Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V Hitachi Semiconductor
155 1S2076A Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V Hitachi Semiconductor
156 1S2090 Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC Hitachi Semiconductor
157 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
158 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
159 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
160 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
161 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
162 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
163 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
164 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
165 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
166 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
167 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
168 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
169 1S689 Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
170 1S689A Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
171 1S750 Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer Hitachi Semiconductor
172 1S752H Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source Hitachi Semiconductor
173 1S753H Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source Hitachi Semiconductor
174 1S754H Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
175 1S755H Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
176 1S756H Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
177 1S757H Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
178 1S758H Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
179 1S759H Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
180 1S760H Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source Hitachi Semiconductor


Datasheets found :: 7508
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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