| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 152 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 153 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 154 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 155 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 156 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 157 |
IRF9521 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 158 |
IRF9522 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 159 |
IRF9523 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 160 |
IRFF110 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. |
General Electric Solid State |
| 161 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 162 |
IRFF111 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. |
General Electric Solid State |
| 163 |
IRFF112 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. |
General Electric Solid State |
| 164 |
IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. |
General Electric Solid State |
| 165 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 166 |
IRFF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. |
General Electric Solid State |
| 167 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
| 168 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
| 169 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
| 170 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
| 171 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
| 172 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
| 173 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
| 174 |
LP0701 |
P-Channel Enhancement-Mode Lateral MOSFET |
Supertex Inc |
| 175 |
LP0701LG |
P-Channel Enhancement-Mode Lateral MOSFET |
Supertex Inc |
| 176 |
LP0701N3 |
P-Channel Enhancement-Mode Lateral MOSFET |
Supertex Inc |
| 177 |
LP0701ND |
P-Channel Enhancement-Mode Lateral MOSFET |
Supertex Inc |
| 178 |
MGA-665P8-BLK |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 179 |
MGA-665P8-TR1 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 180 |
MGA-665P8-TR2 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
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