| No. |
Part Name |
Description |
Manufacturer |
| 151 |
AP2128K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 152 |
AP2128K-1.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 153 |
AP2128K-1.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 154 |
AP2128K-1.8TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 155 |
AP2128K-2.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 156 |
AP2128K-2.8TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 157 |
AP2128K-3.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 158 |
AP2128K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 159 |
AP2128K-3.9TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 160 |
AP2128K-4.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 161 |
AP2128K-4.75TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 162 |
AP2128K-5.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 163 |
AP2128K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 164 |
AP2129 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 165 |
AP2129K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 166 |
AP2129K-1.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 167 |
AP2129K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 168 |
AP2129K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 169 |
BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop |
Infineon |
| 170 |
BAT60A |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 171 |
BAV45 |
Extremely low leakage and low capacitance diode (IR=10pA at VRRM) |
Mullard |
| 172 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 173 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 174 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 175 |
BCR400R |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 176 |
BCR400W |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 177 |
BFT66 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
| 178 |
BFT66 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 179 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 180 |
BFT67 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
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