| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 152 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 153 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 154 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 155 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 156 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 157 |
2N915 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 158 |
2N915A |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 159 |
2N916 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 160 |
2N916A |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 161 |
2N918 |
Silicon NPN epitaxial planar transistor for UHF amplifiers and oscillators |
AEG-TELEFUNKEN |
| 162 |
2N918 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 163 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 164 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 165 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 166 |
2SA1435 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications |
SANYO |
| 167 |
2SA1436 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications |
SANYO |
| 168 |
2SA1437 |
PNP Epitaxial Planar Silicon Transistor High-hFE, AF Amplifier Applications |
SANYO |
| 169 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 170 |
2SA1562 |
PNP Epitaxial Planar Silicon Transistors High-hFE AF Amplifier Applications |
SANYO |
| 171 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 172 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 173 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 174 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 175 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 176 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 177 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 178 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 179 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 180 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
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