| No. |
Part Name |
Description |
Manufacturer |
| 151 |
CXA3174N |
AGC IF for GSM/PCS |
SONY |
| 152 |
CXD1250M |
Example of Combination of Frame Readout System CCD Image Sensor and System IC |
SONY |
| 153 |
CXD1254AR |
Example of Combination of Frame Readout System CCD Image Sensor and System IC |
SONY |
| 154 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 155 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 156 |
D1001UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 157 |
D1014 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
etc |
| 158 |
D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL |
SemeLAB |
| 159 |
D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 160 |
D1221UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED |
SemeLAB |
| 161 |
D1222UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL |
SemeLAB |
| 162 |
D2204UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED |
SemeLAB |
| 163 |
D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 164 |
D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
SemeLAB |
| 165 |
D2290UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 166 |
D5K1 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL |
New Jersey Semiconductor |
| 167 |
D5K2 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL |
New Jersey Semiconductor |
| 168 |
EB104 |
Application Note - GET 600 Watts RF from four power FETs, MRF150 |
Motorola |
| 169 |
EB311 |
In-Circuit Programming of FLASH Memory Using the Monitor Mode for the MC68HC908SR12 |
Motorola |
| 170 |
EMIF02-SPK02F2 |
2-line IPAD™ EMIF filter and ESD protection |
ST Microelectronics |
| 171 |
ERW03-060 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 172 |
ERW04-060 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 173 |
ERW05-060 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 174 |
ERW06-060 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 175 |
ERW07-120 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 176 |
ERW08-120 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 177 |
ERW09-120 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 178 |
ERW10-120 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 179 |
ERW11-120 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
| 180 |
ERW12-120 |
Ratings and characteristics of Fuji silicon diode |
Fuji Electric |
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