| No. |
Part Name |
Description |
Manufacturer |
| 151 |
AGM1264F-MLYW-T |
0.3-7.0V; 15.0mA; number of dots: 128 x 64dots; 15.0mA; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; liquid crystal display |
AZ Displays |
| 152 |
ASITPR175 |
NPN SILICON RF-MICROWAVE POWER TRANSISTOR |
Advanced Semiconductor |
| 153 |
BA2901YF-M |
Automotive Ground Sense Comparators |
ROHM |
| 154 |
BA2901YF-MGE2 |
Automotive Ground Sense Comparators |
ROHM |
| 155 |
BA2902YF-M |
Automotive Ground Sense Operational Amplifiers |
ROHM |
| 156 |
BA2902YF-MGE2 |
Automotive Ground Sense Operational Amplifiers |
ROHM |
| 157 |
BA2903YF-M |
Automotive Ground Sense Comparators |
ROHM |
| 158 |
BA2903YF-MGE2 |
Automotive Ground Sense Comparators |
ROHM |
| 159 |
BA2904YF-M |
Automotive Ground Sense Operational Amplifiers |
ROHM |
| 160 |
BA2904YF-MGE2 |
Automotive Ground Sense Operational Amplifiers |
ROHM |
| 161 |
BA4558YF-M |
Automotive Low Noise Operational Amplifiers |
ROHM |
| 162 |
BA4558YF-MGE2 |
Automotive Low Noise Operational Amplifiers |
ROHM |
| 163 |
BA4560YF-M |
Automotive Low Noise Operational Amplifiers |
ROHM |
| 164 |
BA4560YF-MGE2 |
Automotive Low Noise Operational Amplifiers |
ROHM |
| 165 |
BA4580YF-M |
Low Noise Grand Sense Operational Amplifier |
ROHM |
| 166 |
BA4580YF-MGE2 |
Low Noise Grand Sense Operational Amplifier |
ROHM |
| 167 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 168 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 169 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 170 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 171 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 172 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 173 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 174 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 175 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 176 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 177 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 178 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 179 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 180 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| | | |
