| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ERJUP6F2202V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 152 |
ERJUP6F2203V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 153 |
ERJUP6F2204V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 154 |
ERJUP8F2200V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 155 |
ERJUP8F2201V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 156 |
ERJUP8F2202V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 157 |
ERJUP8F2203V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 158 |
ERJXGNF2200U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 159 |
ERJXGNF2200Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 160 |
ERJXGNF2201U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 161 |
ERJXGNF2201Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 162 |
ERJXGNF2202U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 163 |
ERJXGNF2202Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 164 |
ERJXGNF2203U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 165 |
ERJXGNF2203Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 166 |
F2201 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 167 |
F2202 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 168 |
FPF2200 |
Integrated Load Switch with 500mA High Precision Current Limit |
Fairchild Semiconductor |
| 169 |
FPF2201 |
Integrated Load Switch with 500mA High Precision Current Limit |
Fairchild Semiconductor |
| 170 |
FPF2202 |
Integrated Load Switch with 500mA High Precision Current Limit |
Fairchild Semiconductor |
| 171 |
HF220-28 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 172 |
HF220-50 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 173 |
HF220-50F |
NPN RF POWER TRANSISTOR |
Advanced Semiconductor |
| 174 |
IRF220 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 175 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 176 |
IRF220 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 177 |
IRF220 |
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 178 |
IRF220 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 179 |
IRF220-223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 180 |
IRF2204 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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