| No. |
Part Name |
Description |
Manufacturer |
| 151 |
MRF586 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 152 |
MRF586 |
NPN silicon high frequency transistor NF=3.0dB/0.5GHz |
Motorola |
| 153 |
MRF587 |
High-frequency transistor NPN silicon |
MA-Com |
| 154 |
MRF587 |
HIGH-FREQUENCY TRANSISTOR NPN SILICON |
Motorola |
| 155 |
MRF587 |
HIGH-FREQUENCY TRANSISTOR NPN SILICON |
Tyco Electronics |
| 156 |
N74F583D |
4-bit BCD adder |
Philips |
| 157 |
N74F583N |
4-bit BCD adder |
Philips |
| 158 |
NX8562LF581-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. Anode floating. FC-PC connector. |
NEC |
| 159 |
NX8562LF589-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode floating. FC-PC connector. |
NEC |
| 160 |
NX8563LF581-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. FC-PC connector. Anode floating. |
NEC |
| 161 |
NX8563LF589-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode floating. |
NEC |
| 162 |
PB-IRF5800 |
Leaded -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 163 |
PB-IRF5801 |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 164 |
PB-IRF5802 |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 165 |
PB-IRF5803 |
Leaded -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 166 |
PB-IRF5803D2 |
Leaded -40V FETKY - MOSFET and Schottky Diode in a SO-8 package |
International Rectifier |
| 167 |
PB-IRF5805 |
Leaded -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 168 |
PB-IRF5806 |
Leaded -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 169 |
PB-IRF5810 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
| 170 |
PB-IRF5850 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
| 171 |
PB-IRF5851 |
Leaded 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package |
International Rectifier |
| 172 |
PB-IRF5852 |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
| 173 |
Q62702-F587 |
npn silicon rf transistor |
Siemens |
| 174 |
Q62702-F588 |
npn silicon rf transistor |
Siemens |
| 175 |
Q62702-F589 |
NPN SILICON RF TRANSISTOR |
Siemens |
| 176 |
SF58 |
5.0 AMP SUPER FAST RECTIFIERS |
Bytes |
| 177 |
SF58 |
SUPER FAST RECTIFIER DIODES |
EIC discrete Semiconductors |
| 178 |
SF58 |
SUPER FAST RECOVERY RECTIFIERS |
Micro Commercial Components |
| 179 |
SF58 |
POWER RECTIFIERS(5.0A,500-1000V) |
MOSPEC Semiconductor |
| 180 |
SF58 |
Rectifier: Superfast |
Taiwan Semiconductor |
| | | |
