| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 152 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 153 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 154 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 155 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 156 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 157 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 158 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 159 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 160 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 161 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 162 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 163 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 164 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 165 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 166 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 167 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 168 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 169 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 170 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 171 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 172 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 173 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 174 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 175 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 176 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 177 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 178 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 179 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 180 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
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