| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ERG5SG822 |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 152 |
ERG5SG822H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 153 |
ERG5SG822P |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 154 |
ERG5SG823 |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 155 |
ERG5SG823H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 156 |
ERG5SG823P |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 157 |
ERJA1AG820U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 158 |
ERJA1AG821U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 159 |
ERJA1AG822U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 160 |
ERJB1AG820U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 161 |
ERJB1AG821U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 162 |
ERJB1AG822U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 163 |
ERJB2AG820V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 164 |
ERJB2AG821V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 165 |
ERJB2AG822V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 166 |
ERJB2AG823V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 167 |
ERJB2AG824V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 168 |
FAR-F6CE-1G8200-L2TD-U |
Piezoelectric SAW BPF (1000 to 2500 MHz) |
Fujitsu Microelectronics |
| 169 |
FAR-F6CE-1G8200-L2TD-V |
Piezoelectric SAW BPF (1000 to 2500 MHz) |
Fujitsu Microelectronics |
| 170 |
FAR-F6CE-1G8200-L2TD-W |
Piezoelectric SAW BPF (1000 to 2500 MHz) |
Fujitsu Microelectronics |
| 171 |
G820 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 172 |
G821 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 173 |
G8211-11 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 174 |
G8211-12 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 175 |
G8211-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 176 |
G8211-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 177 |
G8211-31 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 178 |
G8211-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 179 |
G822 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 180 |
G823 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| | | |
