| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ATIR0711S |
SUBMINIATURE, HIGH SENSITIVITY PHOTOINTERRUPTER |
Kingbright Electronic |
| 152 |
C3704-02 |
INputV: 5Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 153 |
C3704-03 |
INputV: 6-9Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 154 |
DN8893 |
High Sensitivity Hall IC (Operation in Alternative Magnetic Field) |
Panasonic |
| 155 |
DN8893MS |
High Sensitivity Hall IC (Operating in Alternative Magnetic Field) |
Panasonic |
| 156 |
DS2Y |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 157 |
DS2Y-S-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 158 |
DS2Y-S-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 159 |
DS2Y-S-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 160 |
DS2Y-S-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 161 |
DS2Y-S-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 162 |
DS2Y-S-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 163 |
DS2Y-S-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 164 |
DS2Y-S-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 165 |
DS2Y-SL2-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 166 |
DS2Y-SL2-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 167 |
DS2Y-SL2-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 168 |
DS2Y-SL2-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 169 |
DS2Y-SL2-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 170 |
DS2Y-SL2-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 171 |
DS2Y-SL2-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 172 |
DS2Y-SL2-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 173 |
FPT120 |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 174 |
FPT120A |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 175 |
FPT120B |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 176 |
FPT120C |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 177 |
FPT130 |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 178 |
FPT130A |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 179 |
FPT130B |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 180 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
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