No. |
Part Name |
Description |
Manufacturer |
151 |
2N5835 |
NPN silicon high frequency transistor 2.5GHz - 10mAdc |
Motorola |
152 |
2N5836 |
NPN silicon high frequency transistor 2.0GHz - 50mAdc |
Motorola |
153 |
2N5837 |
NPN silicon high frequency transistor 1.7GHz - 100mAdc |
Motorola |
154 |
2N5843 |
NPN silicon High-Frequency Transistor 1.2GHz 50mAdc |
Motorola |
155 |
2N5943 |
NPN silicon high frequency transistor 1.2GHz - 50mAdc |
Motorola |
156 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
157 |
2N6268 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
158 |
2N6269 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
159 |
2N6304 |
NPN silicon high frequency transistor 1.4GHz - 10mAdc |
Motorola |
160 |
2N6305 |
NPN silicon high frequency transistor 1.2GHz - 10mAdc |
Motorola |
161 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
162 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
163 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
164 |
2SA1978-T1B |
fT=4GHz PNP Bip Tr |
NEC |
165 |
2SC3541 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL130681-12 is also the datasheet of 2SC3541, see the Electrical Characteristics table) |
NEC |
166 |
2SC3542 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL132081-12 is also the datasheet of 2SC3542, see the Electrical Characteristics table) |
NEC |
167 |
2SC5315 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16 GHz series) |
TOSHIBA |
168 |
2SC5316 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series) |
TOSHIBA |
169 |
2SC5317 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series) |
TOSHIBA |
170 |
2SC5317FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series) |
TOSHIBA |
171 |
2SC5318 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series) |
TOSHIBA |
172 |
2SC5320 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: FT=16GHz series) |
TOSHIBA |
173 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
174 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
175 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
176 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
177 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
178 |
3C-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
179 |
40898 |
6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
180 |
40899 |
2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
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