| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ALM2402-Q1 |
Dual Opamp with High Current Output 12-SON -40 to 125 |
Texas Instruments |
| 152 |
ALM2402QDRRRQ1 |
Dual Opamp with High Current Output 12-SON -40 to 125 |
Texas Instruments |
| 153 |
ALM2402QPWPRQ1 |
Dual Opamp with High Current Output 14-HTSSOP -40 to 125 |
Texas Instruments |
| 154 |
AN-298 |
Noise immunity with high threshold logic - Application Note |
Motorola |
| 155 |
AT83C24 |
Smart Card Interface Compliant with ISO 7816, EMV2000, GIE-CB, GSM and WHQL Standards. Step-up/down Converter with Programmable Voltage Output: 5V and 3V (65 mA), 1.8V (40 mA) with High Efficiency From 80% to 98% |
Atmel |
| 156 |
ATR0842 |
4-channel LVDS Laser Diode Driver with High Voltage Output for Blue Laser |
Atmel |
| 157 |
B3520 |
N-CHANNEL DMOS FET SWITCH High Gain Level Shifter |
BayLinear |
| 158 |
B3520K4 |
N-channel DMOS FET switch with high gain level shifter |
BayLinear |
| 159 |
B3540 |
N-CHANNEL DMOS FET SWITCH High Gain Level Shifter |
BayLinear |
| 160 |
B3540K4 |
N-channel DMOS FET switch with high gain level shifter |
BayLinear |
| 161 |
BA187 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 162 |
BA187 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 163 |
BA188 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 164 |
BA188 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 165 |
BA189 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 166 |
BA189 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 167 |
BA190 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 168 |
BA190 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 169 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 170 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 171 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 172 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 173 |
BAY92 |
Diffused silicon switching diode with high reverse voltage |
AEG-TELEFUNKEN |
| 174 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 175 |
BCM5665 |
StrataXGS® Multilayer Switch with HiGig™ |
Broadcom |
| 176 |
BCM5690 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 177 |
BCM5690 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 178 |
BCM5690 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 179 |
BCM5692 |
12-Port Layer 2+ Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 180 |
BCM5695 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig+™ stacking |
Broadcom |
| | | |
