No. |
Part Name |
Description |
Manufacturer |
151 |
2N5335 |
3 Apere High-speed NPN silicon 6W power transistor |
Motorola |
152 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
153 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
154 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
155 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
156 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
157 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
158 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
159 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
160 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
161 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
162 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
163 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
164 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
165 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
166 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
167 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
168 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
169 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
170 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
171 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
172 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
173 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
174 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
175 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
176 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
177 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
178 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
179 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
180 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
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