| No. |
Part Name |
Description |
Manufacturer |
| 151 |
EEUFC1H121L |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
| 152 |
EEUFC1H121LB |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
| 153 |
EEUFC1H121LE |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
| 154 |
EEUFM1H121L |
Aluminum Electrolytic Capacitors (Radial Lead Type) FM-A |
Panasonic |
| 155 |
EEUFM1H121LB |
Aluminum Electrolytic Capacitors (Radial Lead Type) FM-A |
Panasonic |
| 156 |
EEUFM1H121LE |
Aluminum Electrolytic Capacitors (Radial Lead Type) FM-A |
Panasonic |
| 157 |
EEUFR1H121L |
Aluminum Electrolytic Capacitors (Radial Lead Type) FR-A |
Panasonic |
| 158 |
EEUFR1H121LB |
Aluminum Electrolytic Capacitors (Radial Lead Type) FR-A |
Panasonic |
| 159 |
ELL6RH121M |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(6mm)(2) |
Panasonic |
| 160 |
ELL6SH121M |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(6mm)(2) |
Panasonic |
| 161 |
ELL6UH121M |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(6mm)(2) |
Panasonic |
| 162 |
EXBU2H121JV |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
| 163 |
FCH121 |
Dual 4-input NAND/NOR gate with nodes |
Mullard |
| 164 |
FJH121/7410N |
Triple 3-input NAND gate |
Mullard |
| 165 |
FLH121 |
Two NAND elements with four inputs each |
Siemens |
| 166 |
FNH121 |
Single 5-input NOR/OR gate (positive logic) |
AEG-TELEFUNKEN |
| 167 |
FPH121 |
Dual expandable 4-input NAND gate (positive logic) |
AEG-TELEFUNKEN |
| 168 |
FPH121 |
Dual expandable 4-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 169 |
FZH121 |
Dual 5-Input NAND Gates |
IPRS Baneasa |
| 170 |
FZH121 |
Dual 5-Input NAND Gates |
IPRS Baneasa |
| 171 |
FZH121 |
Two AND-NOT operators with five inputs each |
IPRS Baneasa |
| 172 |
FZH121 |
Two NAND elements with five inputs each |
Siemens |
| 173 |
FZH121 |
Two NAND elements with five inputs each |
Siemens |
| 174 |
GJH121/74H10N |
Triple 3-input NAND gate |
Mullard |
| 175 |
KFH1216D2M-DEB |
FLASH MEMORY |
Samsung Electronic |
| 176 |
KFH1216D2M-DED |
FLASH MEMORY |
Samsung Electronic |
| 177 |
KFH1216D2M-DIB |
FLASH MEMORY |
Samsung Electronic |
| 178 |
KFH1216D2M-DID |
FLASH MEMORY |
Samsung Electronic |
| 179 |
KFH1216Q2M-DEB |
FLASH MEMORY |
Samsung Electronic |
| 180 |
KFH1216Q2M-DED |
FLASH MEMORY |
Samsung Electronic |
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