| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BGY96A |
UHF Amplifier Module |
Philips |
| 152 |
BGY96B |
UHF Amplifier Module |
Philips |
| 153 |
EB90 |
Application Note - Low-cost VHF amplifier has broadband performance, MRF260, MRF262 |
Motorola |
| 154 |
EB93 |
Application Note - 60 watt VHF amplifier uses splitting/combining techniques |
Motorola |
| 155 |
J308 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 156 |
J308-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion |
ON Semiconductor |
| 157 |
J309 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 158 |
J310 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 159 |
J310RLRP |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 160 |
J310ZL1 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 161 |
JAN2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 162 |
JAN2N2708 |
NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications |
Motorola |
| 163 |
JAN2N3127 |
PNP germanium mesa transistor designed for industrial and commercial VHF/UHF amplifier applications |
Motorola |
| 164 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 165 |
KSK161 |
N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER) |
Samsung Electronic |
| 166 |
KSK211 |
N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER) |
Samsung Electronic |
| 167 |
KTC3878 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ HF/ VHF AMPLIFIER) |
Korea Electronics (KEC) |
| 168 |
LA1845NV |
FM/AM HF Amplifiers: Home stereo system tuner IC with electronic tuning |
SANYO |
| 169 |
LV23002M |
FM/AM HF Amplifiers: Single-chip turner IC for radio/cassette home stereo systems |
SANYO |
| 170 |
MD3133 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 171 |
MD3133F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 172 |
MD3134 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 173 |
MD3134F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 174 |
MFE2000 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 175 |
MFE2001 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 176 |
MFE3004 |
Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 177 |
MFE3005 |
Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 178 |
MFE3007 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications |
Motorola |
| 179 |
MM1500 |
NPN silicon RF power transistor designed for UHF amplifier, frequency multiplier and oscillator applications |
Motorola |
| 180 |
MM1500A |
NPN Silicon RF Power Transistor designed for UHF amplifier, frequency multiplier, and oscillator applications |
Motorola |
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