No. |
Part Name |
Description |
Manufacturer |
151 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
152 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
153 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
154 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
155 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
156 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
157 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
158 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
159 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
160 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
161 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
162 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
163 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
164 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
165 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
166 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
167 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
168 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
169 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
170 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
171 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
172 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
173 |
2SJ90 |
Silicon monolithic P channel junction dual pair transistors |
TOSHIBA |
174 |
2SK270 |
Silicon Monolithic N Channel junction transistor |
TOSHIBA |
175 |
320G240C |
320 x 24 Dots Graphic LCD |
Vishay |
176 |
3250 |
MONOLITHIC DUAL NPN TRANSISTORS |
Linear Systems |
177 |
3550 |
MONOLITHIC DUAL PNP TRANSISTORS |
Linear Systems |
178 |
3D3215 |
MONOLITHIC 5-TAP 3.3V FIXED DELAY LINE |
Data Delay Devices Inc |
179 |
3D3215 SERIES |
MONOLITHIC 5-TAP 3.3V FIXED DELAY LINE |
Data Delay Devices Inc |
180 |
3D3215M-1.5 |
Delay 1.5 +/-0.7 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
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