| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BSW89 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 152 |
BSX12 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 153 |
BSX12A |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 154 |
BSX12S |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 155 |
BSX38 |
Silicon NPN epitaxial planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 156 |
BSX39 |
Switching transistor NPN silicon, SOT-23 case, marking 02 |
Motorola |
| 157 |
BSX81 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 158 |
BU111 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
| 159 |
BU114 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
| 160 |
BU326A |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 161 |
BU326A/4 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 162 |
BU326A/5 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 163 |
BU326A/6 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 164 |
BU326A/7 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 165 |
BU326A/8 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 166 |
DXTN26070CY |
70V NPN POWER SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| 167 |
FCX555 |
150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| 168 |
FCX555TA |
150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| 169 |
GD111 |
Germanium PNP switching transistor for medium speeds in logic circuits |
RFT |
| 170 |
GS109 |
Germanium PNP switching transistor for medium speeds in logic circuits |
RFT |
| 171 |
GS112 |
Germanium PNP switching transistor for medium speeds in logic circuits |
RFT |
| 172 |
GS121 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 173 |
GS122 |
Slow germanium PNP switching transistor with high base-emitter voltage strength, suitable for use in calculating machines |
RFT |
| 174 |
MBT35200 |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 175 |
MBT35200 |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 176 |
MBT35200MT1 |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 177 |
MBT35200MT1 |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 178 |
MBT35200MT1-D |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 179 |
MM4257 |
Switching Transistor PNP Silicon |
Motorola |
| 180 |
MM4258 |
Switching Transistor PNP Silicon |
Motorola |
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