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Datasheets for HRONOUS

Datasheets found :: 28174
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No. Part Name Description Manufacturer
151 54LS163DM V(cc): +5V; synchronous presettable binary counter Fairchild Semiconductor
152 54LS163FM V(cc): +5V; synchronous presettable binary counter Fairchild Semiconductor
153 54LS164 8-Bit Serial In/Parallel Out Shift Register with Asynchronous Clear National Semiconductor
154 54LS168 Synchronous BI-Directional BCD Decade Counter National Semiconductor
155 54LS168DMQB 54LS168 Synchronous Bi-Directional BCD Decade Counter National Semiconductor
156 54LS168DMQB 54LS168 Synchronous Bi-Directional BCD Decade Counter National Semiconductor
157 54LS168FMQB 54LS168 Synchronous Bi-Directional BCD Decade Counter National Semiconductor
158 54LS168LMQB 54LS168 Synchronous Bi-Directional BCD Decade Counter National Semiconductor
159 54LS169 Synchronous 4-Bit Up/Down Binary Counter National Semiconductor
160 54LS169DMQB Synchronous 4-Bit Up/Down Binary Counter National Semiconductor
161 54LS169FMQB Synchronous 4-Bit Up/Down Binary Counter National Semiconductor
162 54LS169LMQB Synchronous 4-Bit Up/Down Binary Counter National Semiconductor
163 54LS193 Synchronous 4-Bit Up/Down Binary Counter with Dual Clock National Semiconductor
164 54LS193DMQB 7 V, synchronous 4-bit up/down binary counter with dual clock National Semiconductor
165 54LS193FMQB 7 V, synchronous 4-bit up/down binary counter with dual clock National Semiconductor
166 54LS193LMQB 7 V, synchronous 4-bit up/down binary counter with dual clock National Semiconductor
167 54LS323DMQB 7 V, 8-bit universal shift/storage register with synchronous reset and common I/O pin National Semiconductor
168 54LS323FMQB 7 V, 8-bit universal shift/storage register with synchronous reset and common I/O pin National Semiconductor
169 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
170 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
171 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
172 5962-1022101VSC 1.6-V to 6.3-V input, 6-A Synchronous Step Down Swift Converter 20-CFP -55 to 125 Texas Instruments
173 5962-7600801VEA Synchronous 4-Bit Counters Texas Instruments
174 5962-7600801VFA Synchronous 4-Bit Counters Texas Instruments
175 5962-8407501VEA Synchronous 4-Bit Binary Counters 16-CDIP Texas Instruments
176 5962-86072012A 4-State Synchronous Bidirectional Counter National Semiconductor
177 5962-86072012A(54F169LMQB) 4-State Synchronous Bidirectional Counter National Semiconductor
178 5962-86072012A(54F169LMQB) 4-State Synchronous Bidirectional Counter National Semiconductor
179 5962-8607201EA 4-State Synchronous Bidirectional Counter National Semiconductor
180 5962-8607201EA(54F169DMQB) 4-State Synchronous Bidirectional Counter National Semiconductor


Datasheets found :: 28174
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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