| No. |
Part Name |
Description |
Manufacturer |
| 151 |
12LC11 |
Silicon diffused junction rectifier 800V 12A |
TOSHIBA |
| 152 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
| 153 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
| 154 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 155 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 156 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 157 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| 158 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
| 159 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 160 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
| 161 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
| 162 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 163 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 164 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 165 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 166 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 167 |
15CC11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 168 |
15CD11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 169 |
15FC11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 170 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 171 |
1600EXD22 |
Silicon alloy-diffused junction rectifier 2500V 1600A |
TOSHIBA |
| 172 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
| 173 |
1600FXD22 |
Silicon alloy-diffused junction rectifier 3000V 1600A |
TOSHIBA |
| 174 |
171J |
High Voltage Differential FET Amplifier |
Intronics |
| 175 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 176 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 177 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 178 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 179 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 180 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| | | |
