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Datasheets for IGH SP

Datasheets found :: 23665
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 1SS389 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
152 1SS391 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
153 1SS392 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
154 1SS393 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
155 1SS394 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
156 1SS395 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
157 1SS396 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
158 1SS397 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
159 1SS398 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
160 1SS399 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
161 1SS400T1 High Speed Switching Diode ON Semiconductor
162 1SS401 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
163 1SS402 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
164 1SS404 Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications TOSHIBA
165 1SS92 (1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes ROHM
166 27E040T-12 512K*8 bits high speed, low power electrically erasable EPROM Winbond Electronics
167 28C256AJC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
168 28C256AJC-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
169 28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
170 28C256AJC-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
171 28C256AJC-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
172 28C256AJC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
173 28C256AJC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
174 28C256AJC-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
175 28C256AJI-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
176 28C256AJI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
177 28C256AJI-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
178 28C256AJI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
179 28C256AJI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
180 28C256AJI-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 23665
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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