| No. |
Part Name |
Description |
Manufacturer |
| 151 |
GL496 |
High Speed Infrared Emitting Diode |
SHARP |
| 152 |
GL513 |
TO-18 Type Infrared Emitting Diode |
SHARP |
| 153 |
GL533 |
High Speed Infrared Emitting Diode for Camera AF (Automatic Focusing) |
SHARP |
| 154 |
GL550 |
High Speed Infrared Emitting Diode |
SHARP |
| 155 |
GL551 |
High Speed Infrared Emitting Diode |
SHARP |
| 156 |
GL560 |
Low Peak Forward Voltage Type � 5 Resin Mold Package Infrared Emitting Diodes |
SHARP |
| 157 |
GL561 |
Low Peak Forward Voltage Type � 5 Resin Mold Package Infrared Emitting Diodes |
SHARP |
| 158 |
GL610T |
Ultra-compact Chip Part Type Infrared Emitting Diodes |
SHARP |
| 159 |
GL710 |
Infrared Emitting Diode |
SHARP |
| 160 |
H11B255 |
Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. |
General Electric Solid State |
| 161 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 162 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 163 |
HE8807FL |
GaAlAs Infrared Emitting Diodes |
Hitachi Semiconductor |
| 164 |
HE8807SG |
GaAlAs Infrared Emitting Diodes |
Hitachi Semiconductor |
| 165 |
HE8812SG |
GaAlAs Infrared Emitting Diode |
Hitachi Semiconductor |
| 166 |
IE-0530HP |
Infrared Emitting Diode |
etc |
| 167 |
IR908-7C |
EVERLIGHTs Infrared Emitting Diode IR908-7C is a high intensity diode , molded in a water clear plastic package. |
Everlight Electronics |
| 168 |
IR928-6C |
EVERLIGHTs Infrared Emitting Diode IR928-6C is a high intensity diode , molded in a water clear plastic package. |
Everlight Electronics |
| 169 |
IS605 |
Photon coupled isolator Ga As infrared emitting diode & light activated SCR |
ISOCOM |
| 170 |
IS606 |
Photon coupled isolator Ga As infrared emitting diode & light activated SCR |
ISOCOM |
| 171 |
IS656A |
6V; 1A narrow beam angle side looking infrared side looking infrared emitting diode |
ISOCOM |
| 172 |
ITR20002 |
infrared emitting diode and an NPN silicon phototransistor |
Everlight Electronics |
| 173 |
ITR8102 |
gallium arsenide infrared emitting diode |
Everlight Electronics |
| 174 |
ITR9909 |
An infrared Emitting Diode and an NPN silicon phototransistor |
Everlight Electronics |
| 175 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 176 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 177 |
K102 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 178 |
K102 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 179 |
K104 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 180 |
K104 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
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