No. |
Part Name |
Description |
Manufacturer |
151 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
152 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
153 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
154 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
155 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
156 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
157 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
158 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
159 |
2N2895 |
NPN silicon annular transistor |
Motorola |
160 |
2N2896 |
NPN silicon annular transistor |
Motorola |
161 |
2N2897 |
NPN silicon annular transistor |
Motorola |
162 |
2N2907AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
163 |
2N2907AHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
164 |
2N2907AHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
165 |
2N2907ARHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
166 |
2N2907ARHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
167 |
2N2907ARUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
168 |
2N2907ARUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
169 |
2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
170 |
2N2907AUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
171 |
2N2907AUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
172 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
173 |
2N2913 |
Bipolar Transistor |
New Jersey Semiconductor |
174 |
2N2913MP |
Bipolar Transistor |
New Jersey Semiconductor |
175 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
176 |
2N2914 |
Bipolar Transistor |
New Jersey Semiconductor |
177 |
2N2914L |
Bipolar Transistor |
New Jersey Semiconductor |
178 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
179 |
2N2915 |
Bipolar Transistor |
New Jersey Semiconductor |
180 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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