No. |
Part Name |
Description |
Manufacturer |
151 |
ACY41 |
Germanium Transistor |
Mullard |
152 |
ACY44 |
Germanium P-N-P medium power transistor |
Mullard |
153 |
ACY44 |
Germanium Transistor |
Mullard |
154 |
AD149 |
Germanium P-N-P high power transistor |
Mullard |
155 |
AD149 |
Germanium P-N-P LF Power Transistor |
Mullard |
156 |
AD161 |
Germanium N-P-N high power transistor |
Mullard |
157 |
AD161 |
Complementary germanium power transistors AD161/AD162 |
Mullard |
158 |
AD161 |
Germanium A.F. Power Transistor |
Mullard |
159 |
AD162 |
Germanium P-N-P high power transistor |
Mullard |
160 |
AD162 |
Germanium A.F. Power Transistor |
Mullard |
161 |
AD162 |
Complementary germanium power transistors AD161/AD162 |
Mullard |
162 |
ADY26 |
Germanium Transistor |
Mullard |
163 |
ADZ11 |
Germanium Transistor |
Mullard |
164 |
ADZ12 |
Germanium Transistor |
Mullard |
165 |
AEY13 |
Low noise microwave amplifier in S band diode |
Mullard |
166 |
AEY15 |
Low noise microwave amplifier in S band diode |
Mullard |
167 |
AEY16 |
Low noise microwave amplifier in S band diode |
Mullard |
168 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
169 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
170 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
171 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
172 |
AF114 |
Germanium Transistor |
Mullard |
173 |
AF115 |
Germanium Transistor |
Mullard |
174 |
AF116 |
Germanium Transistor |
Mullard |
175 |
AF117 |
Germanium Transistor |
Mullard |
176 |
ASY26 |
Germanium P-N-P low power transistor |
Mullard |
177 |
ASY26 |
Germanium Transistor |
Mullard |
178 |
ASY27 |
Germanium P-N-P low power transistor |
Mullard |
179 |
ASY27 |
Germanium Transistor |
Mullard |
180 |
ASY28 |
Germanium N-P-N low power transistor |
Mullard |
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