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Datasheets for LE

Datasheets found :: 284381
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No. Part Name Description Manufacturer
151 10PM4AC 10A Single Phase, Avalanche Controlled Rectifier Bridge 400V IPRS Baneasa
152 10PM6AC 10A Single Phase, Avalanche Controlled Rectifier Bridge 600V IPRS Baneasa
153 10PM8AC 10A Single Phase, Avalanche Controlled Rectifier Bridge 800V IPRS Baneasa
154 10SI05 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V IPRS Baneasa
155 10SI05R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V IPRS Baneasa
156 10SI1 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V IPRS Baneasa
157 10SI10 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V IPRS Baneasa
158 10SI10R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V IPRS Baneasa
159 10SI12 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V IPRS Baneasa
160 10SI12R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V IPRS Baneasa
161 10SI1R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V IPRS Baneasa
162 10SI2 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V IPRS Baneasa
163 10SI2R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V IPRS Baneasa
164 10SI3 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V IPRS Baneasa
165 10SI3R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V IPRS Baneasa
166 10SI4 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V IPRS Baneasa
167 10SI4R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V IPRS Baneasa
168 10SI5 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V IPRS Baneasa
169 10SI5R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V IPRS Baneasa
170 10SI6 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V IPRS Baneasa
171 10SI6R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V IPRS Baneasa
172 10SI7 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V IPRS Baneasa
173 10SI7R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V IPRS Baneasa
174 10SI8 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V IPRS Baneasa
175 10SI8R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V IPRS Baneasa
176 10SI9 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V IPRS Baneasa
177 10SI9R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V IPRS Baneasa
178 10TP581T Thermopile type Infrared sensor SEMITEC
179 1102A 200 V single phase bridge 1.4-1.5 A forward current, 3000 ns recovery time Voltage Multipliers
180 1102B 200 V single phase bridge 1.4-1.5 A forward current, 3000 ns recovery time Voltage Multipliers


Datasheets found :: 284381
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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