No. |
Part Name |
Description |
Manufacturer |
151 |
1N5537 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
152 |
1N5537B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
153 |
1N5537B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
154 |
1N5538 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
155 |
1N5538B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
156 |
1N5538B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
157 |
1N5539 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
158 |
1N5539B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
159 |
1N5539B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
160 |
1N5540 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
161 |
1N5540B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
162 |
1N5540B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
163 |
1N5541 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
164 |
1N5541B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
165 |
1N5541B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
166 |
1N5542 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
167 |
1N5542B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
168 |
1N5542B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
169 |
1N5543 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
170 |
1N5543B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
171 |
1N5543B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
172 |
1N5544 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
173 |
1N5544B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
174 |
1N5544B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
175 |
1N5545 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
176 |
1N5545B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
177 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
178 |
1N5546 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage |
Knox Semiconductor Inc |
179 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
180 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| | | |