| No. |
Part Name |
Description |
Manufacturer |
| 151 |
STD130 ASIC |
Equivalent standard load for layers |
Samsung Electronic |
| 152 |
STD131 ASIC |
Equivalent standard load for layers |
Samsung Electronic |
| 153 |
STDL130 ASIC |
Equivalent standard load for layers |
Samsung Electronic |
| 154 |
SY170/1 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 155 |
SY170/2 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 156 |
SY170/3 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 157 |
SY170/4 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 158 |
SY171/1 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 159 |
SY171/2 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 160 |
SY171/3 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 161 |
SY171/4 |
Si rectifier diode, possibly equivalent SSIE11/12 |
RFT |
| 162 |
SY525/03-to-SY525/05 |
Schottky power rectifier diodes, possibly equivalent SD31, SD41 |
RFT |
| 163 |
SY525/06-to-SY525/08 |
Schottky power rectifier diodes, possibly equivalent SD31, SD41 |
RFT |
| 164 |
TNPW |
Metal Film Layer on High Quality Ceramic, Protective Top Coat, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions |
Vishay |
| 165 |
TYPE 630D EXTRALYTIC® |
Aluminum Capacitors, Electrolytics, Critical long-interval timing circuits, Exceptionally high capacitance stability, excellent shelf and life characteristics, Standard inventoried product |
Vishay |
| 166 |
U804D |
MOS circuit, 6-fold analog value memory, possibly equivalent SAB3013 |
RFT |
| 167 |
U806D |
MOS circuit, Infrared remote control receiver circuit, possibly equivalent SAB3022B |
RFT |
| 168 |
U807D |
MOS circuit, Infrared remote control transmitter circuit, possibly equivalent SAB3021 |
RFT |
| 169 |
U810D |
MOS circuit, PLL-Synthesizer, possibly equivalent SAA1056 |
RFT |
| 170 |
VQ121B |
Infrared emitter diode, possibly equivalent SFH409 |
RFT |
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