| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N6257 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 152 |
2N6258 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 153 |
2N6259 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 154 |
2N6260 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 155 |
2N6261 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 156 |
2N6262 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 157 |
2N6263 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 158 |
2N6264 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 159 |
2N6371 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 160 |
2N6483 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 161 |
2N6484 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 162 |
2N6485 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 163 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 164 |
2N929 |
Low frequency transistor |
mble |
| 165 |
2N929 |
Low frequency transistor |
mble |
| 166 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 167 |
2N930 |
Low frequency transistor |
mble |
| 168 |
2N930 |
Low frequency transistor |
mble |
| 169 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 170 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 171 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
| 172 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 173 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 174 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 175 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 176 |
2SA1602 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE) |
Isahaya Electronics Corporation |
| 177 |
2SA1811 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS |
TOSHIBA |
| 178 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 179 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 180 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
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