No. |
Part Name |
Description |
Manufacturer |
151 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
152 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
153 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
154 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
155 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
156 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
157 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
158 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
159 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
160 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
161 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
162 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
163 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
164 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
165 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
166 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
167 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
168 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
169 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
170 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
171 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
172 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
173 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
174 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
175 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
176 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
177 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
178 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
179 |
2N6520RLRM |
High Voltage Transistors |
ON Semiconductor |
180 |
2SA1195 |
Silicon PNP epitaxial high voltage transistor |
TOSHIBA |
| | | |