| No. |
Part Name |
Description |
Manufacturer |
| 151 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 152 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 153 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 154 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 155 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 156 |
MRF18085A |
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 157 |
MRF18085ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 158 |
MRF18085AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 159 |
MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 160 |
MW4IC2020 |
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
| 161 |
MW4IC2020GMBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 162 |
MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 163 |
MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
| 164 |
MW4IC915GMBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 165 |
MW4IC915MBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 166 |
MW5IC2030GMBR1 |
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 167 |
MW5IC2030MBR1 |
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 168 |
MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers |
Motorola |
| 169 |
MWIC930GR1 |
N–CDMA, W–CDMA, GSM/GSM EDGE 746–960 MHz, 30 W, 26–28 V RF LDMOS Integrated Power Amplifier |
Freescale (Motorola) |
| 170 |
MWIC930R1 |
N–CDMA, W–CDMA, GSM/GSM EDGE 746–960 MHz, 30 W, 26–28 V RF LDMOS Integrated Power Amplifier |
Freescale (Motorola) |
| 171 |
NDL7540PA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 172 |
NDL7910P |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 173 |
NX7460LE |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 174 |
NX7460LE-BA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 175 |
NX7460LE-CA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 176 |
NX7660JC |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 177 |
NX8501 |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 178 |
NX8561JD |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 179 |
NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 180 |
NX8563LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| | | |
